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Power Transistors
2SB1416
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SD2136
3.80.2
Unit: mm
7.50.2 4.50.2
Features
* High forward current transfer ratio hFE which has satisfactory linearity * Low collector-emitter saturation voltage VCE(sat) * Allowing automatic insertion with radial taping
10.80.2
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
0.8 C
16.01.0
0.70.1 0.70.1 1.150.2 1.150.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -60 -60 -5 -3 -5 1.5 150 -55 to +150 Unit V V V A A W C C
2.50.2 0.8 C 1 2 3 0.50.1 2.050.2 0.40.1
2.50.2
1: Emitter 2: Collector 3: Base MT-3-A1 Package
Electrical Characteristics Ta = 25C 3C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO VBE ICES ICEO IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = -30 mA, IB = 0 VCE = -4 V, IC = -3 A VCE = -60 V, VBE = 0 VCE = -30 V, IB = 0 VEB = -5 V, IC = 0 VCE = -4 V, IC = -1 A VCE = -4 V, IC = -3 A IC = -3 A, IB = - 0.375A VCB = -5 V, IE = 0.1 A, f = 200 MHz IC = -1 A, IB1 = - 0.1 A, IB2 = 0.1 A 270 0.5 1.2 0.3 40 10 -1.2 V MHz s s s Min -60 -1.8 -200 -300 -1 250 Typ Max Unit V V A A mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE1 P 40 to 90 Q 70 to 150 R 120 to 250
Publication date: March 2003
SJD00071BED
1
2SB1416
PC Ta
2.0 Without heat sink
IC VCE
-1.2
-1.2
IC VBE
Ta=25C
IB=-8mA
VCE=-4V 25C Ta=75C -25C
Collector power dissipation PC (W)
1.6
-1.0
-1.0
Collector current IC (A)
- 0.8
-7mA -6mA
Collector current IC (A)
- 0.8
1.2
- 0.6
-5mA -4mA
- 0.6
0.8
- 0.4
-3mA -2mA -1mA
- 0.4
0.4
- 0.2
- 0.2
0
0
0 40 80 120 160
0
-2
-4
-6
-8
-10
-12
0
0
- 0.2 - 0.4 - 0.6 - 0.8 -1.0
-1.2
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base-emitter voltage VBE (V)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
-10
IC/IB=8
hFE IC
240
VCE=-4V
fT I E
300
VCB=-5V f=200MHz TC=25C
Forward current transfer ratio hFE
-1
Ta=75C
Transition frequency fT (MHz)
200
250
160
200
25C
- 0.1
Ta=75C Ta=25C Ta=-25C
120
-25C
150
80
100
- 0.01
40
50
- 0.001 -1
-10
-100
-1 000
0 -1
-10
-100
-1 000
0 - 0.01
- 0.1
-1
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Safe operation area
-100
Single pulse TC=25C
Rth t
104 Without heat sink
Thermal resistance Rth (C/W)
Collector current IC (A)
-10
ICP IC t=10ms DC t=1ms
103
102
-1
10
- 0.1
1
- 0.01 - 0.1
-1
-10
-100
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector-emitter voltage VCE (V)
Time t (s)
2
SJD00071BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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